Representatives from industry will have the opportunity to learn how their companies can benefit from research at Missouri University of Science and Technology during Missouri S&T’s first Industry Day, which will be held Thursday, Oct. 13, on the S&T campus.

“We will show companies how they can partner with Missouri S&T researchers to advance technologies that are important to their businesses,” says John Eash, executive director of corporate relations at Missouri S&T. “They will discover how S&T’s unique research areas can meet their needs, and they will be also be able to visit with faculty and students, listen to guest speakers and tour our research centers and labs.”

Industry Day registration begins at 8 a.m. Thursday, Oct. 13, with networking and a light breakfast. Following a welcome and introductions, Missouri S&T Chancellor Cheryl B. Schrader will share Missouri S&T’s research mission.

At 9:15, a panel of experts will discuss “Doing Research with Missouri S&T.” Panelists include Ted Day, CEO of MoSci Corp.; George Mues, technology transfer manager (R&D) for Ameren and a Missouri S&T graduate in chemical engineering and engineering management; and Dr. Kamal Khayat, Vernon and Maralee Jones Professor of Civil Engineering and director of the Center for Infrastructure Engineering Studies and the Center for Transportation Infrastructure and Safety.

Following a showcase of campus research centers, lunch will feature a keynote address by Ricky Martin, capability integration leader for metal and ceramics technology at The Boeing Co. and a Missouri S&T graduate in metallurgical engineering and engineering management. Martin will share insights into Boeing’s research partnership with Missouri S&T and demonstrate its value and return on investment. He will also discuss ways that large and small companies and benefit from a research partnership with S&T.

The event will conclude with tours of several Missouri S&T labs and research centers.

Deadline to register is Monday, Oct. 3. More information is available online.